|
| Tp1=0.5[μs] | Tp2=4.5[μs] | Tp3=5.5[μs] | Tp4=9.5[μs] |
|
| Ts1=1.83[μs] | Ts2=4.83[μs] | Ts3=6.83[μs] | Ts4=9.83[μs] |
| Ts5=10[μs] |
| t= | 0μs | 0.5μs | 1.833μs | 4.5μs | 4.833μs | 5.5μs | 6.833μs | 9.5μs | 9.833μs | 10μs |
| VL= | 0V | 360V | 20V | -340V | 0V | -360V | -20V | 340V | 0V | 0V |
| IL= | -10.5A | -10.5A | 13.5A | 16.167A | 10.5A | 10.5A | -13.5A | -16.167A | -10.5A | -10.5A |
| Iin= | 0A | -10.5A | 13.5A | 16.167A | 0A | -10.5A | 13.5A | 16.167A | 0A | 0A |
Primary and secondary gating:
Leakage winding voltage
Current through the primary leakage inductance:
Current through the primary leakage inductance:
Secondary winding voltage Ns1:
Secondary winding voltage Ns2:
Voltage across the inductor L
Current through the inductor:
Voltage across the Mosfets Q1&Q3
Current through the Mosfets Q1&Q3:
Voltage across the Mosfets Q2&Q4
Current through the Mosfets Q2&Q4:
