|
|
Lp=77.95[μH] | Cout=157.87[μF] | Ton=0.7[μs] | Toff=4[μs] |
d=0.176[.] | Iin_avg=2.13[A] | Iprim=1.95[A] | Isec=1.58[A] |
|
Rsnubber=411.77[kOhm] |
Gate signal for the Mosfet:
Primary winding voltage:
Current through the primary inductor:
ipmin=1.0E-15; ipmax=1.9536287823055
Secondary winding voltage:
Current through the secondary inductor:
ismin=5.0E-16; ismax=1.5786899250953
Current through the magnetization inductor:
Current through the Mosfet:
Voltage across the Mosfet
Current through the diode:
Voltage across the Diode